Si based spintronic devices
In this research activity we concentrate on the fabrication and characterisation of Si and Si/Ge based semiconductor nanostructures allowing the control of electron and nuclear spin properties. Our main interests lie in low-dimensional structures which are realised by molecular beam epitaxy (MBE). This includes the fabrication of novel spintransistors based on electron and hole channels in Si/SiGe systems, the control of nuclear spins in isotope clean nanostructures as well as the realisation of dilute magnetic semiconductors in the Si/Ge system for spin injection in spin- and quantum devices. This work is supported financially by DFG via SFB 631.
